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FPDB60PH60B
February, 2009
FPDB60PH60B
Smart Power Module for Front-End Rectifier
General Description
FPDB60PH60B is an advanced smart power module of PFC(Power Factor Correction) that Fairchild has newly developed and designed mainly targeting mid-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to high frequency switching IGBTs. System reliability is futher enhanced by the integrated under-voltage lock-out and over-current protection function.
Features
* Low thermal resistance due to AlN-DBC substrate * 600V-60A 2-phase IGBT PWM semi-converter including a drive IC for gate driving and protection * Typical switching frequency of 20kHz * Isolation rating of 2500Vrms/min.
Applications
* AC 180V ~ 264V single-phase front-end rectifier
Top View
44mm
Bottom View
26.8mm
Fig. 1.
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Integrated Power Functions
* PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
* For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection * Fault signaling: Corresponding to a UV fault * Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
(1) VCC(L) (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (7) CFOD (8) CSC (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC (15) NC (16) NC (17) NC (18) NC (19) RTH (20) VTH
(21) VAC(22) NSENSE (23) N NC
(24) N Case Temperature (T C) Detecting Point (25) R
(26) S DBC Substrate (27) PR
Fig. 2.
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Pin Descriptions
Pin Number 1 2 4 5 6 7 8 19 20 21 22 24 25 26 27 3, 9~18, 23 Pin Name VCC COM IN(R) IN(S) VFO CFOD CSC R(TH) V(TH) VACNSENSE N R S PR NC Pin Description Common Bias Voltage for IC and IGBTs Driving Common Supply Ground Signal Input for Low-side R-phase IGBT Signal Input for Low-side S-phase IGBT Fault Output Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Over Current Detection NTC Thermistor terminal NTC Thermistor terminal Current Sensing Terminal Current Sensing Reference Terminal Negative Rail of DC-Link Output for R Phase Output for S Phase Positive Rail of DC-Link No Connection
Internal Equivalent Circuit and Input/Output Pins
(20) V TH (19) R TH (8) C SC (7) C FOD (6) V FO (5) IN (S) (4) IN (R) (2) COM (1) VCC
NTC Therm istor D1 D2
(27) P R (26) S (25) R
CSC CFOD VFO OUT(S) IN(S) IN(R)
Q1 D3 Q2 D4
(24) N (23) NC OUT(R) COM VCC
Shunt Resistor
(22) N SENSE (21) V AC-
Note : 1) Converter is composed of two IGBTs including four diodes and one IC which has gate driving and protection functions.
Fig. 3.
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Absolute Maximum Ratings (TJ = 25C,
Converter Part
Item Supply Voltage Supply Voltage (Surge) Output Voltage Output Voltage (Surge) Collector-emitter Voltage Each IGBT collector current Each IGBT collector current (Peak) Collector Dissipation Repetitive Peak Reverse Voltage Peak Forward Surge Current Power Rating of Shunt Resistor Operating Junction Temperature Symbol Vi Vi(Surge) VPN VPN(Surge) VCES IC ICP PC VRRM IFSM PRSH TJ
Unless Otherwise Specified)
Condition Applied between R-S Applied between R-S Applied between P- N Applied between P- N TC = 25C TC = 25C, Under 1ms pulse width TC = 25C per One IGBT Single half sine-wave TC < 125C (Note 1)
Rating 264 500 450 500 600 60 90 178 600 350 2 -40 ~ 150
Unit VRMS V V V V A A W V A W C
Note : 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150C(@TC 100C). However, to insure safe operation of the SPM, the average junction temperature should be limited to TJ(ave) 125C (@TC 100C).
Control Part
Item Control Supply Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage Symbol Condition VCC Applied between VCC - COM VIN VFO IFO VSC Applied between IN - COM Applied between VFO - COM Sink Current at VFO Pin Applied between CSC - COM Rating 20 -0.3~17 -0.3~VCC+0.3 5 -0.3~VCC+0.3 Unit V V V mA V
Total System
Item Module Case Operation Temperature Storage Temperature Isolation Voltage Symbol TC TSTG VISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC Condition Rating -20 ~ 100 -40 ~ 150 2500 Unit C C Vrms
Thermal Resistance
Item Junction to Case Thermal Resistance (Referenced to PKG center) Symbol R(j-c)Q IGBT R(j-c)HD High-side diode R(j-c)LD Low-side diode Condition Min. Typ. Max. 0.7 1.5 0.85 Unit C/W C/W C/W
Note : 2. For the measurement point of case temperature(TC), please refer to Fig. 2.
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Electrical Characteristics (TJ = 25C, Unless Otherwise Specified)
Converter Part
Item IGBT saturation voltage High-side diode voltage Low-side diode voltage Switching Times Symbol VCE(sat) VFH VFL tON tC(ON) tOFF tC(OFF) trr Irr Current sensing resistor Collector - emitter Leakage Current RSENSE ICES VCE = VCES Condition VCC =15V, VIN = 5V; IC =50A IF = 50A IF = 50A VPN = 400V, VCC = 15V, IC =60A VIN = 0V 5V, Inductive Load (Note 3) Min. 1.8 Typ. 2.0 2.4 1.2 560 270 520 110 44 6.5 2.0 Max. 2.5 2.9 1.6 2.2 250 Unit V V V ns ns ns ns ns A m A
Note 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Fig. 4
Control Part
Item Symbol Condition Quiescent VCC Supply Cur- IQCCL VCC = 15V, IN = 0V VCC - COM rent Fault Output Voltage Over Current Trip Level Supply Circuit UnderVoltage Protection Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Resistance of Thermistor VFOH VFOL VSC(ref) UVCCD UVCCR tFOD VIN(ON) VIN(OFF) RTH @ TC = 25C (Note Fig. 9) @ TC = 80C (Note Fig. 9) VSC = 0V, VFO Circuit: 4.7k to 5V Pull-up VSC = 1V, VFO Circuit: 4.7k to 5V Pull-up VCC = 15V Detection Level Reset Level CFOD = 33nF (Note 4) Applied between IN - COM Min. 4.5 0.45 10.7 11.2 1.4 3.0 Typ. 0.5 11.9 12.4 1.8 50 5.76 Max. 26 0.8 0.55 13.0 13.2 2.0 0.8 Unit mA V V V V V ms V V k k
Note 4. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Recommended Operating conditions
Item Input Supply Voltage Output Voltage Control Supply Voltage Control Supply Variation PWM Input Signal Symbol Condition VI Applied between R - S VPN VCC fPWM Applied between P - N Applied between VCC - COM TC 100C, TJ 125C, Per IGBT Min. 180 13.5 -1 Typ. 280 15 20 Max. 264 400 16.5 1 Unit Vrms V V V/s kHz
dVCC/dt Applied between IN - COM
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Electrical Characteristics
Irr
100%of IC 120%of IC
VCE
90%of IC 10%of VCE
IC
10%of IC
IC VIN
10%of IC
VCE 10%of VCE VIN
tON
trr tC(ON) tOFF
tC(OFF)
(a) Turn-on
Fig. 4. Switching Time Definition
(b) Turn-off
Mechanical Characteristics and Ratings
Item Mounting Torque Device Flatness Weight Mounting Screw: - M3 Note Fig. 5 Condition Recommended 0.62N*m Limits Min. 0.51 0 Typ. 0.62 15.00 Max. 0.72 +120 Units N*m m g
(+)
(+) (+)
Fig. 5. Flatness Measurement Position
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Time Charts of SPMs Protective Function
In p u t S ig n a l In te rn a l IG B T G a te -E m itte r V o lta g e
P3 UV re s e t
C o n tro l S u p p ly V o lta g e
P5 UV d e te c t P1 P2
P6
O u tp u t C u rr e n t
F a u lt O u tp u t S ig n a l
P4
P1 : Normal operation - IGBT ON and conducting current P2 : Under voltage detection P3 : IGBT gate interrupt P4 : Fault signal generation P5 : Under voltage reset P6 : Normal operation - IGBT ON and conducting current
Fig. 6. Under-Voltage Protection
P5 In p u t S ig n a l P6 In te r n a l IG B T G a t e - E m itt e r V o lt a g e
O C D e te c t io n
P1 P4 O u tp u t C u r r e n t P7
P2 S e n s in g V o lta g e
R C F ilt e r D e la y O C R e fe re n c e V o lt a g e ( 0 . 5 V )
F a u lt O u t p u t S ig n a l
P3
P8
P1 : Normal operation - IGBT ON and conducting current P2 : Over current detection P3 : IGBT gate interrupt / Fault signal generation P4 : IGBT is slowly turned off P5 : IGBT OFF signal P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation P7 : IGBT OFF state P8 : Fault Output reset and normal operation start
Fig. 7. Over Current Protection
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Vac
+5V
PFCM
VTH RTH CSC
NTC Thermistor
PR S
CSC
R
Microcontroller or DSP
CFOD VFO IN(S) IN(R) COM
CFOD VFO IN(S) IN(R) COM OUT(R)
Shunt Resistor
Inverter
OUT(S)
N NSENSE VAC-
VCC
VCC
Note : 1) For the over-current protection, please set the delay time in the range 3~4s.
Fig. 8. Application Example
R-T Graph 120 100 Resistance [k] 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [C]
Fig. 9. R-T Curve of the Built-in Thermistor
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Detailed Package Outline Drawings
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Detailed Package Outline Drawings
(c)2009 Fairchild Semiconductor Corporation
February, 2009
FPDB60PH60B
Detailed Package Outline Drawings
(c)2009 Fairchild Semiconductor Corporation
February, 2009
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST(R) FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM
PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM Star* PowerTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2009 Fairchild Semiconductor Corporation
February, 2009

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